发明专利
TW201245515A 底基板、氮化鎵結晶疊層基板及其製造方法 UNDERLYING SUBSTRATE, GALLIUM NITRIDE CRYSTAL-LAMINATED SUBSTRATE AND METHOD OF PRODUCING THE SAME
审中-公开
基本信息:
- 专利标题： 底基板、氮化鎵結晶疊層基板及其製造方法 UNDERLYING SUBSTRATE, GALLIUM NITRIDE CRYSTAL-LAMINATED SUBSTRATE AND METHOD OF PRODUCING THE SAME
- 专利标题（英）：Underlying substrate, gallium nitride crystal-laminated substrate and method of producing the same
- 专利标题（中）：底基板、氮化镓结晶叠层基板及其制造方法 UNDERLYING SUBSTRATE, GALLIUM NITRIDE CRYSTAL-LAMINATED SUBSTRATE AND METHOD OF PRODUCING THE SAME
- 申请号：TW101107486 申请日：2012-03-06
- 公开(公告)号：TW201245515A 公开(公告)日：2012-11-16
- 发明人： 古家大士 , 東正信 , 只友一行 , 岡田成仁
- 申请人： 德山股份有限公司 , 國立大學法人山口大學
- 申请人地址： TOKUYAMA CORPORATION 日本 JP; YAMAGUCHI UNIVERSITY 日本 JP
- 专利权人： 德山股份有限公司,國立大學法人山口大學
- 当前专利权人： 德山股份有限公司,國立大學法人山口大學
- 当前专利权人地址： TOKUYAMA CORPORATION 日本 JP; YAMAGUCHI UNIVERSITY 日本 JP
- 代理人： 周良謀; 周良吉
- 优先权： 日本 2011-049487 20110307
- 主分类号： C30B
- IPC分类号： C30B ; H01L
To provide a GaN-laminated substrate comprising an underlying sapphire substrate on which the planes of various plane orientations are laminated, such as a substrate having, as a main plane, an a-plane: <11-20>-plane, an m-plane: <1-100>-plane or a <11-22>-plane of GaN having low through dislocation density and high crystallinity, and a method of producing the same. A gallium nitride crystal-laminated substrate includes an underlying sapphire substrate and a gallium nitride crystal layer formed by growing crystals thereof on the underlying substrate, the gallium nitride crystal layer growing by epitaxial lateral overgrowth on the side walls of, for example, a c-plane in the grooves formed in a plural number in the main plane of the underlying sapphire substrate to thereby form the surface thereof in parallel with the main plane, the surface thereof comprising a non-polar plane such as a-plane or m-plane, or a semipolar plane such as <11-22>-plane, and a dark point density of the gallium nitride crystals being less than 2*10