基本信息:
- 专利标题： 具有受保護的背板之ＰＶＤ濺射靶 PVD SPUTTERING TARGET WITH A PROTECTED BACKING PLATE
- 专利标题（英）：PVD sputtering target with a protected backing plate
- 专利标题（中）：具有受保护的背板之ＰＶＤ溅射靶 PVD SPUTTERING TARGET WITH A PROTECTED BACKING PLATE
- 申请号：TW101103567 申请日：2012-02-03
- 公开(公告)号：TW201243078A 公开(公告)日：2012-11-01
- 发明人： 拉許德幕哈瑪德M , 汪榮軍
- 申请人： 應用材料股份有限公司
- 申请人地址： APPLIED MATERIALS, INC. 美國 US
- 专利权人： 應用材料股份有限公司
- 当前专利权人： 應用材料股份有限公司
- 当前专利权人地址： APPLIED MATERIALS, INC. 美國 US
- 代理人： 蔡坤財; 李世章
- 优先权： 美國 13/024,198 20110209
- 主分类号： C23C
- IPC分类号： C23C
Embodiments of the invention provide sputtering targets utilized in physical vapor deposition (PVD) and methods to form such sputtering targets. In one embodiment, a sputtering target contains a target layer disposed on a backing plate, and a protective coating layer - usually containing a nickel material - covering and protecting a region of the backing plate that would otherwise be exposed to plasma during the PVD processes. In many examples, the target layer contains a nickel-platinum alloy, the backing plate contains a copper alloy (e.g., copper-zinc), and the protective coating layer contains metallic nickel. The protective coating layer eliminates the formation of highly conductive, copper contaminants typically derived by plasma erosion of the copper alloy contained within the exposed surfaces of the backing plate. Therefore, the substrates and the interior surfaces of the PVD chamber remain free of such copper contaminants during the PVD processes.
公开/授权文献:
- TWI540216B 具有受保護的背板之ＰＶＤ濺射靶 公开/授权日：2016-07-01