基本信息:
- 专利标题： 用於ＲＦ物理氣相沉積之製程套件 PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION
- 专利标题（英）：Process kit for RF physical vapor deposition
- 专利标题（中）：用于ＲＦ物理气相沉积之制程套件 PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION
- 申请号：TW099126787 申请日：2010-08-11
- 公开(公告)号：TW201107515A 公开(公告)日：2011-03-01
- 发明人： 華瑞恰克拉拉 , 沙芬戴亞基倫古莫 , 拉希德莫哈曼德M , 汪榮軍 , 艾倫阿道夫米勒 , 謝資甘
- 申请人： 應用材料股份有限公司
- 申请人地址： APPLIED MATERIALS, INC. 美國 US
- 专利权人： 應用材料股份有限公司
- 当前专利权人： 應用材料股份有限公司
- 当前专利权人地址： APPLIED MATERIALS, INC. 美國 US
- 代理人： 蔡坤財; 李世章
- 优先权： 美國 61/232,968 20090811
- 主分类号： C23C
- IPC分类号： C23C
Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.