发明专利
TW201101463A 對源極／汲極延伸，環袋及閘極介電厚度具有不同組態之類極性場效電晶體的結構和製造 STRUCTURE AND FABRICATION OF LIKE-POLARITY FIELD-EFFECT TRANSISTORS HAVING DIFFERENT CONFIGURATIONS OF SOURCE/DRAIN EXTENSIONS, HALO POCKETS, AND GATE DIELECTRIC THICKNESSES
审中-公开
基本信息:
- 专利标题： 對源極／汲極延伸，環袋及閘極介電厚度具有不同組態之類極性場效電晶體的結構和製造 STRUCTURE AND FABRICATION OF LIKE-POLARITY FIELD-EFFECT TRANSISTORS HAVING DIFFERENT CONFIGURATIONS OF SOURCE/DRAIN EXTENSIONS, HALO POCKETS, AND GATE DIELECTRIC THICKNESSES
- 专利标题（英）：Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses
- 专利标题（中）：对源极／汲极延伸，环袋及闸极介电厚度具有不同组态之类极性场效应管的结构和制造 STRUCTURE AND FABRICATION OF LIKE-POLARITY FIELD-EFFECT TRANSISTORS HAVING DIFFERENT CONFIGURATIONS OF SOURCE/DRAIN EXTENSIONS, HALO POCKETS, AND GATE DIELECTRIC THICKNESSES
- 申请号：TW099108624 申请日：2010-03-24
- 公开(公告)号：TW201101463A 公开(公告)日：2011-01-01
- 发明人： 布魯西亞 康史坦丁 , 法蘭奇 威廉D , 艾雀爾 唐諾M , 楊正君 , 巴爾 山蒂普R , 帕克 D 寇尼
- 申请人： 國家半導體公司
- 申请人地址： NATIONAL SEMICONDUCTOR CORPORATION 美國 US
- 专利权人： 國家半導體公司
- 当前专利权人： 國家半導體公司
- 当前专利权人地址： NATIONAL SEMICONDUCTOR CORPORATION 美國 US
- 代理人： 桂齊恆; 閻啟泰
- 优先权： 美國 12/382,971 20090327
- 主分类号： H01L
- IPC分类号： H01L
A group of high-performance like-polarity insulated-gate field-effect transistors (100, 108, 112, 116, 120, and 124 or 102, 110, 114, 118, 122, and 126) have selectably different configurations of lateral source/drain extensions, halo pockets, and gate dielectric thicknesses suitable for a semiconductor fabrication platform that provides a wide variety of transistors for analog and/or digital applications. Each transistor has a pair of source/drain zones, a gate dielectric layer, and a gate electrode. Each source/drain zone includes a main portion and a more lightly doped lateral extension. The lateral extension of one of the source/drain zones of one of the transistors is more heavily doped or/and extends less deeply below the upper semiconductor surface than the lateral extension of one of the source/drain zones of another of the transistors.