发明专利
TW201044590A 組態及製造具有沿著源極／汲極區帶有經裁製袋部之非對稱場效電晶體的半導體結構 CONFIGURATION AND FABRICATION OF SEMICONDUCTOR STRUCTURE HAVING ASYMMETRIC FIELD-EFFECT TRANSISTOR WITH TAILORED POCKET PORTION ALONG SOURCE/DRAIN ZONE
审中-公开
基本信息:
- 专利标题： 組態及製造具有沿著源極／汲極區帶有經裁製袋部之非對稱場效電晶體的半導體結構 CONFIGURATION AND FABRICATION OF SEMICONDUCTOR STRUCTURE HAVING ASYMMETRIC FIELD-EFFECT TRANSISTOR WITH TAILORED POCKET PORTION ALONG SOURCE/DRAIN ZONE
- 专利标题（英）：Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone
- 专利标题（中）：组态及制造具有沿着源极／汲极区带有经裁制袋部之非对称场效应管的半导体结构 CONFIGURATION AND FABRICATION OF SEMICONDUCTOR STRUCTURE HAVING ASYMMETRIC FIELD-EFFECT TRANSISTOR WITH TAILORED POCKET PORTION ALONG SOURCE/DRAIN ZONE
- 申请号：TW099108665 申请日：2010-03-24
- 公开(公告)号：TW201044590A 公开(公告)日：2010-12-16
- 发明人： 楊正君 , 布魯西亞 康史坦丁 , 巴爾 山蒂普R
- 申请人： 國家半導體公司
- 申请人地址： NATIONAL SEMICONDUCTOR CORPORATION 美國 US
- 专利权人： 國家半導體公司
- 当前专利权人： 國家半導體公司
- 当前专利权人地址： NATIONAL SEMICONDUCTOR CORPORATION 美國 US
- 代理人： 桂齊恆; 閻啟泰
- 优先权： 美國 12/382,967 20090327
- 主分类号： H01L
- IPC分类号： H01L
An asymmetric insulated-gate field effect transistor (100U or 102U) provided along an upper surface of a semiconductor body contains first and second source/drain zones (240 and 242 or 280 and 282) laterally separated by a channel zone (244 or 284) of the transistor's body material. A gate electrode (262 or 302) overlies a gate dielectric layer (260 or 300) above the channel zone. A pocket portion (250 or 290) of the body material more heavily doped than laterally adjacent material of the body material extends along largely only the first of the S/D zones and into the channel zone. The vertical dopant profile of the pocket portion is tailored to reach a plurality of local maxima (316-1 - 316-3) at respective locations (PH-1 - PH-3) spaced apart from one another. The tailoring is typically implemented so that the vertical dopant profile of the pocket portion is relatively flat near the upper semiconductor surface. As a result, the transistor has reduced leakage current.