基本信息:
- 专利标题： 高頻半導體裝置 HIGH FREQUENCY SEMICONDUCTOR DEVICE
- 专利标题（英）：High frequency semiconductor device
- 专利标题（中）：高频半导体设备 HIGH FREQUENCY SEMICONDUCTOR DEVICE
- 申请号：TW098112996 申请日：2009-04-20
- 公开(公告)号：TW201029117A 公开(公告)日：2010-08-01
- 发明人： 川嶋慶一 , 細見剛 , 平山敏和
- 申请人： 三菱電機股份有限公司
- 申请人地址： MITSUBISHI ELECTRIC CORPORATION 日本 JP
- 专利权人： 三菱電機股份有限公司
- 当前专利权人： 三菱電機股份有限公司
- 当前专利权人地址： MITSUBISHI ELECTRIC CORPORATION 日本 JP
- 代理人： 洪澄文
- 优先权： 日本 2009-010996 20090121
- 主分类号： H01L
- IPC分类号： H01L
A high frequency semiconductor device includes a package having a cavity, and a semiconductor chip located on bottom surface of the cavity and having a gate electrode, a source electrode, and a drain electrode. Further the high frequency semiconductor device includes a gate frame, a drain frame, and a source frame each located on the bottom surface of the cavity, a gate wire connecting the gate electrode and the gate frame, a drain wire connecting the drain electrode and the drain frame, and a source wire connecting the source electrode and the source frame. Further, the semiconductor chip is spaced from the centre of the bottom surface of the cavity so as to lengthen the gate wire and the drain wire compared to the case of the semiconductor chip is located on the centre of the bottom surface of the cavity.
公开/授权文献:
- TWI393222B 高頻半導體裝置 公开/授权日：2013-04-11