基本信息:
- 专利标题： 電漿處理裝置及電漿處理方法 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
- 专利标题（英）：Plasma processing apparatus and plasma processing method
- 专利标题（中）：等离子处理设备及等离子处理方法 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
- 申请号：TW098119218 申请日：2009-06-09
- 公开(公告)号：TW201012315A 公开(公告)日：2010-03-16
- 发明人： 平山昌樹 , 大見忠弘
- 申请人： 東京威力科創股份有限公司 , 國立大學法人東北大學
- 申请人地址： TOKYO ELECTRON LIMITED 日本 JP; TOHOKU UNIVERSITY 日本 JP
- 专利权人： 東京威力科創股份有限公司,國立大學法人東北大學
- 当前专利权人： 東京威力科創股份有限公司,國立大學法人東北大學
- 当前专利权人地址： TOKYO ELECTRON LIMITED 日本 JP; TOHOKU UNIVERSITY 日本 JP
- 代理人： 林志剛
- 优先权： 日本 2008-153423 20080611
- 主分类号： H05H
- IPC分类号： H05H
Provided is a plasma processing device with a coaxial tube structure in which characteristic impedances on the input side and the output side are different. A microwave plasma processing device (10) for plasma-processing a substrate by exciting gas by using a microwave is provided with a processing container (100), a microwave source (900) for outputting the microwave, a first coaxial tube (610) for transmitting the microwave outputted from the microwave source (900), and a dielectric plate (305) for emitting the microwave transmitted through the first coaxial tube (610) into the processing container (100), which is adjacent to the first coaxial tube (610) while facing the inner side of the processing container (100). The thickness ratio between an inner conductor (610a) and an outer conductor (610b) of the first coaxial tube (610) is not uniform in a longitudinal direction.