发明专利
TW201007824A 包含金屬熔絲、反熔絲及／或電阻之金屬閘極整合結構及方法 METAL GATE INTEGRATION STRUCTURE AND METHOD INCLUDING METAL FUSE, ANTI-FUSE AND/OR RESISTOR
审中-公开
基本信息:
- 专利标题： 包含金屬熔絲、反熔絲及／或電阻之金屬閘極整合結構及方法 METAL GATE INTEGRATION STRUCTURE AND METHOD INCLUDING METAL FUSE, ANTI-FUSE AND/OR RESISTOR
- 专利标题（英）：Metal gate integration structure and method including metal fuse, anti-fuse and/or resistor
- 专利标题（中）：包含金属熔丝、反熔丝及／或电阻之金属闸极集成结构及方法 METAL GATE INTEGRATION STRUCTURE AND METHOD INCLUDING METAL FUSE, ANTI-FUSE AND/OR RESISTOR
- 申请号：TW098115438 申请日：2009-05-08
- 公开(公告)号：TW201007824A 公开(公告)日：2010-02-16
- 发明人： 古伯 道格拉斯D , 依夏 艾伯妮娜E , 杰伯瑞塞拉西 艾福瑞G , 何忠信 , 侯 荷伯特 雷 , 金德基 , 柯蘭達門 荃卓瑟卡 , 莫伊 丹 , 羅素 羅伯特 馬克 , 沙法蘭 約翰 馬修 , 斯戴恩 肯尼士 杰 , 羅伯森 諾曼 懷洛 , 王平川 , 顏弘雯
- 申请人： 萬國商業機器公司
- 申请人地址： INTERNATIONAL BUSINESS MACHINES CORPORATION 美國 US
- 专利权人： 萬國商業機器公司
- 当前专利权人： 萬國商業機器公司
- 当前专利权人地址： INTERNATIONAL BUSINESS MACHINES CORPORATION 美國 US
- 代理人： 蔡玉玲
- 优先权： 美國 12/119,526 20080513
- 主分类号： H01L
- IPC分类号： H01L
A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device located and formed upon an active region of a semiconductor substrate and at least one of a fuse structure, an anti-fuse structure and a resistor structure located and formed at least in part simultaneously upon an isolation region laterally separated from the active region within the semiconductor substrate. The field effect device includes a gate dielectric comprising a high dielectric constant material and a gate electrode comprising a metal material. The at least one of the fuse structure, anti-fuse structure and resistor structure includes a pad dielectric comprising the same material as the gate dielectric, and optionally, also a fuse, anti-fuse or resistor that may comprise the same metal material as the gate electrode.
公开/授权文献:
- TWI463542B 包含金屬熔絲、反熔絲及／或電阻之金屬閘極整合結構及方法 公开/授权日：2014-12-01