基本信息:
- 专利标题： 貼合基板之製造方法
- 专利标题（英）：Method for manufacturing bonded substrate
- 专利标题（中）：贴合基板之制造方法
- 申请号：TW098111819 申请日：2009-04-09
- 公开(公告)号：TW200952050A 公开(公告)日：2009-12-16
- 发明人： 飛坂優二 , 久保田芳宏 , 伊藤厚雄 , 田中好一 , 川合信 , 秋山昌次 , 田村博
- 申请人： 信越化學工業股份有限公司
- 申请人地址： SHIN-ETSU CHEMICAL CO., LTD. 日本 JP
- 专利权人： 信越化學工業股份有限公司
- 当前专利权人： 信越化學工業股份有限公司
- 当前专利权人地址： SHIN-ETSU CHEMICAL CO., LTD. 日本 JP
- 代理人： 林志剛
- 优先权： 日本 2008-102148 20080410
- 主分类号： H01L
- IPC分类号： H01L
Provided is a method for manufacturing a bonded substrate having an excellent thin film over the entire substrate surface, especially even at the vicinity of a bonded end portion. The method for manufacturing the bonded substrate wherein the thin film is provided on a second substrate has at least a step of forming an ion implanted layer by implanting, from a surface of a first substrate, i.e., a semiconductor substrate, hydrogen ions or rare gas ions or both types of ions; a step of performing surface activation treatment to at least the first substrate surface wherein ions are implanted or to the bonding surface of the second substrate; a step of bonding the first substrate surface wherein the ions are implanted and the bonding surface of the second substrate with each other, under atmosphere having a humidity of 30% or less and/or a water quantity of 6g/m3 or less; and a peeling step of separating the first substrate at the ion implanted layer and forming the first substrate in a thin film state.
公开/授权文献:
- TWI492275B 貼合基板之製造方法 公开/授权日：2015-07-11