基本信息:
- 专利标题： 濺鍍方法及濺鍍裝置
- 专利标题（英）：Sputtering method and sputtering apparatus
- 专利标题（中）：溅镀方法及溅镀设备
- 申请号：TW097131565 申请日：2008-08-19
- 公开(公告)号：TW200925309A 公开(公告)日：2009-06-16
- 发明人： 磯部辰德 ISOBE, TATSUNORI , 小松孝 KOMATSU, TAKASHI , 佐藤重光 SATOU, SHIGEMITSU , 大空弘樹 OOZORA, HIROKI , 谷口英男 TANIGUCHI, HIDEO , 川口昌男 KAWAGUCHI, MASAO
- 申请人： 愛發科股份有限公司 ULVAC, INC. , 夏普股份有限公司 SHARP KABUSHIKI KAISHA
- 申请人地址： 日本 日本
- 专利权人： 愛發科股份有限公司 ULVAC, INC.,夏普股份有限公司 SHARP KABUSHIKI KAISHA
- 当前专利权人： 愛發科股份有限公司 ULVAC, INC.,夏普股份有限公司 SHARP KABUSHIKI KAISHA
- 当前专利权人地址： 日本 日本
- 代理人： 林志剛
- 优先权： 日本 2007-213973 20070820
- 主分类号： C23C
- IPC分类号： C23C
A sputtering method capable of inhibiting occurrence of abnormal discharge caused by charge-up of a processing substrate and well forming a transparent conductive film on a large-area processing substrate. Power is supplied to targets making respective pairs among a plurality of targets (41a to 41h) facing the processing substrate (S) in a sputter chamber (12) and juxtaposed at a predetermined interval while alternating polarity with predetermined frequency. Each target is alternately switched over between an anode electrode and a cathode electrode. Glow discharge is caused between the anode electrode and the cathode electrode to form a plasma atmosphere to sputter each target. The power supply to each target is intermittently suspended while sputtering.