发明专利
TW200905863A 半導體積體電路裝置及使用此之半導體交換裝置 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR SWITCHING DEVICE USING THEREOF
审中-公开
基本信息:
- 专利标题： 半導體積體電路裝置及使用此之半導體交換裝置 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR SWITCHING DEVICE USING THEREOF
- 专利标题（英）：Semiconductor integrated circuit device and semiconductor switching device using thereof
- 专利标题（中）：半导体集成电路设备及使用此之半导体交换设备 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR SWITCHING DEVICE USING THEREOF
- 申请号：TW097102195 申请日：2008-01-21
- 公开(公告)号：TW200905863A 公开(公告)日：2009-02-01
- 发明人： 紀川健 KIKAWA, TAKESHI , 高谷信一郎 TAKATANI, SHINICHIRO , 行本富久 YUKIMOTO, TOMIHISA , 乙木洋平 OTOKI, YOHEI , 鴨川弘幸 KAMOGAWA, HIROYUKI , 三島友義 MISHIMA, TOMOYOSHI
- 申请人： 日立電線股份有限公司 HITACHI CABLE, LTD.
- 申请人地址： 日本
- 专利权人： 日立電線股份有限公司 HITACHI CABLE, LTD.
- 当前专利权人： 日立電線股份有限公司 HITACHI CABLE, LTD.
- 当前专利权人地址： 日本
- 代理人： 林志剛
- 优先权： 日本 2007-190778 20070723
- 主分类号： H01L
- IPC分类号： H01L
This invention is a semiconductor integrated circuit device and semiconductor switching device using the same, wherein the semiconductor integrated circuit device contains a plurality of semiconductor electronic components involving electric field-effect transistors and means to reduce the side-gate effect between the field-effect transistors. This invention causes the semiconductor energy barrier in the hetero-junction interface within the buffering compound semiconductor layer of the element separation range, and in the interface between the substrate and the buffering compound semiconductor layer, to become non-continuous so that the non-continuous energy barrier does not become the potential barrier to the major carriers of the field-effect transistors when they are conducted in the substrate by controlling the storage of the carriers among the foregoing interfaces. As such, the invention can greatly reduce the side-gate effect from the impedance components adjoining to the field-effect transistors.