发明专利
TW200901331A 具有大且均勻之電流的上指P-I-N二極體的大型陣列及其形成方法 LARGE ARRAY OF UPWARD POINTING P-I-N DIODES HAVING LARGE AND UNIFORM CURRENT AND METHODS OF FORMING THE SAME
审中-公开
基本信息:
- 专利标题： 具有大且均勻之電流的上指P-I-N二極體的大型陣列及其形成方法 LARGE ARRAY OF UPWARD POINTING P-I-N DIODES HAVING LARGE AND UNIFORM CURRENT AND METHODS OF FORMING THE SAME
- 专利标题（英）：Large array of upward pointing P-I-N diodes having large and uniform current and methods of forming the same
- 专利标题（中）：具有大且均匀之电流的上指P-I-N二极管的大型数组及其形成方法 LARGE ARRAY OF UPWARD POINTING P-I-N DIODES HAVING LARGE AND UNIFORM CURRENT AND METHODS OF FORMING THE SAME
- 申请号：TW097111125 申请日：2008-03-27
- 公开(公告)号：TW200901331A 公开(公告)日：2009-01-01
- 发明人： S 布萊德 賀納 HERNER, S. BRAD
- 申请人： 桑迪士克3D公司 SANDISK 3D LLC
- 申请人地址： 美國
- 专利权人： 桑迪士克3D公司 SANDISK 3D LLC
- 当前专利权人： 桑迪士克3D公司 SANDISK 3D LLC
- 当前专利权人地址： 美國
- 代理人： 黃章典; 樓穎智
- 优先权： 美國 11/692,151 20070327 美國 11/692,153 20070327
- 主分类号： H01L
- IPC分类号： H01L ; G11C
An upward-pointing p-i-n diode formed of deposited silicon, germanium, or silicon-germanium is disclosed. The diode has a bottom heavily doped p-type region, a middle intrinsic or lightly doped region, and a top heavily doped n-type region. The top heavily doped p-type region is doped with arsenic, and the semiconductor material of the diode is crystallized in contact with an appropriate silicide, germanide, or silicide-germanide. A large array of such upward-pointing diodes can be formed with excellent uniformity of current across the array when a voltage above the turn-on voltage of the diodes is applied. This diode is advantageously used in a monolithic three dimensional memory array. Methods of forming a population of upward-pointing p-i-n diodes and numerous other aspects are also disclosed.
公开/授权文献:
- TWI441263B 具有大且均勻之電流的上指Ｐ-Ｉ-Ｎ二極體的大型陣列及其形成方法 公开/授权日：2014-06-11