发明专利
TW200836313A 高溫應用所用之銲錫凸塊/凸塊下金屬層結構 SOLDER BUMP/UNDER BUMP METALLURGY STRUCTURE FOR HIGH TEMPERATURE APPLICATIONS
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基本信息:
- 专利标题： 高溫應用所用之銲錫凸塊/凸塊下金屬層結構 SOLDER BUMP/UNDER BUMP METALLURGY STRUCTURE FOR HIGH TEMPERATURE APPLICATIONS
- 专利标题（英）：Solder bump/under bump metallurgy structure for high temperature applications
- 专利标题（中）：高温应用所用之焊锡凸块/凸块下金属层结构 SOLDER BUMP/UNDER BUMP METALLURGY STRUCTURE FOR HIGH TEMPERATURE APPLICATIONS
- 申请号：TW096145429 申请日：2007-11-29
- 公开(公告)号：TW200836313A 公开(公告)日：2008-09-01
- 发明人： 强森麥可E JOHNSON, MICHAEL E. , 史托斯曼湯瑪士 STROTHMANN, THOMAS , 佛提斯喬安 VRTIS, JOAN
- 申请人： 飛立帕奇帕國際股份有限公司 FLIPCHIP INTERNATIONAL, LLC
- 申请人地址： 美國
- 专利权人： 飛立帕奇帕國際股份有限公司 FLIPCHIP INTERNATIONAL, LLC
- 当前专利权人： 飛立帕奇帕國際股份有限公司 FLIPCHIP INTERNATIONAL, LLC
- 当前专利权人地址： 美國
- 代理人： 蔡坤財; 李世章
- 优先权： 美國 11/609,036 20061211
- 主分类号： H01L
- IPC分类号： H01L
Solder bump structures, which comprise a solder bump on a UBM structure, are provided for operation at temperatures of 250 DEG C and above. According to a first embodiment, the UBM structure comprises layers of Ni-P, Pd-P, and gold, wherein the Ni-P and Pd-P layers act as barrier and/or solderable/bondable layers. The gold layer acts as a protective layer. According to second embodiment, the UBM structure comprises layers of Ni-P and gold, wherein the Ni-P layer acts as a diffusion barrier as well as a solderable/bondable layer, and the gold acts as a protective layer. According to a third embodiment, the UBM structure comprises: (i) a thin layer of metal, such as titanium or aluminum or Ti/W alloy; (ii) a metal, such as NiV, W, Ti, Pt, TiW alloy or Ti/W/N alloy; and (iii) a metal alloy such as Pd-P, Ni-P, NiV, or TiW, followed by a layer of gold. Alternatively, a gold, silver, or palladium bump may be used instead of a solder bump in the UBM structure.
公开/授权文献:
- TWI484608B 高溫應用所用之銲錫凸塊／凸塊下金屬層結構 公开/授权日：2015-05-11