基本信息:
- 专利标题： 半導體製程用氧化裝置與方法 OXIDATION APPARATUS AND METHOD FOR SEMICONDUCTOR PROCESS
- 专利标题（英）：Oxidation apparatus and method for semiconductor process
- 专利标题（中）：半导体制程用氧化设备与方法 OXIDATION APPARATUS AND METHOD FOR SEMICONDUCTOR PROCESS
- 申请号：TW096135603 申请日：2007-09-21
- 公开(公告)号：TW200834720A 公开(公告)日：2008-08-16
- 发明人： 井上久司 INOUE, HISASHI , 問谷昌孝 TOIYA, MASATAKA , 水野功勝 MIZUNO, YOSHIKATSU
- 申请人： 東京威力科創股份有限公司 TOKYO ELECTRON LIMITED
- 申请人地址： 日本
- 专利权人： 東京威力科創股份有限公司 TOKYO ELECTRON LIMITED
- 当前专利权人： 東京威力科創股份有限公司 TOKYO ELECTRON LIMITED
- 当前专利权人地址： 日本
- 代理人： 陳長文
- 优先权： 日本 2006-257125 20060922
- 主分类号： H01L
- IPC分类号： H01L
An oxidation apparatus for a semiconductor process includes a process container having a process field configured to accommodate target substrates at intervals vertically, a heater configured to heat the process field; an exhaust system configured to exhaust gas from inside the process field; an oxidizing gas supply circuit configured to supply an oxidizing gas to the process field; and a deoxidizing gas supply circuit configured to supply a deoxidizing gas to the process field. The oxidizing gas supply circuit includes an oxidizing gas nozzle extending over a vertical length corresponding to the process field, and having gas spouting holes arrayed over the vertical length corresponding to the process field. The deoxidizing gas supply circuit includes deoxidizing gas nozzles having different heights respectively corresponding to zones of the process field arrayed vertically, and each having a gas spouting hole formed at height of a corresponding zone.
公开/授权文献:
- TWI423326B 半導體製程用氧化裝置與方法 公开/授权日：2014-01-11