基本信息:
- 专利标题： 低介電常數介電質之黏著性改良 ADHESION IMPROVEMENT FOR LOW K DIELECTRICS
- 专利标题（英）：Adhesion improvement for low k dielectrics
- 专利标题（中）：低介电常数介电质之黏着性改良 ADHESION IMPROVEMENT FOR LOW K DIELECTRICS
- 申请号：TW094107933 申请日：2005-03-15
- 公开(公告)号：TW200605221A 公开(公告)日：2006-02-01
- 发明人： 黃李麗華 HUANG, LIHUA LI , 黃子芳 HUANG, TZU-FANG , 舒奇亞圖戴安 SUGIARTO, DIAN , 夏立群 XIA, LI-QUN , 李偉文彼得 LEE, WAI-MAN PETER , 姆薩德希肯 M' SAAD, HICHEM , 崔振江 CUI, ZHENJIANG , 朴賢秀 PARK, SOHYUN
- 申请人： 應用材料股份有限公司 APPLIED MATERIALS, INC.
- 申请人地址： 美國
- 专利权人： 應用材料股份有限公司 APPLIED MATERIALS, INC.
- 当前专利权人： 應用材料股份有限公司 APPLIED MATERIALS, INC.
- 当前专利权人地址： 美國
- 代理人： 蔡坤財
- 优先权： 美國 10/801,190 20040315
- 主分类号： H01L
- IPC分类号： H01L ; C23C
Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.
公开/授权文献:
- TWI285927B 低介電常數介電質之黏著性改良 ADHESION IMPROVEMENT FOR LOW K DIELECTRICS 公开/授权日：2007-08-21