基本信息:
- 专利标题： 플라즈마 처리 장치, 플라즈마 처리 장치의 운용 방법 및 급전 장치
- 专利标题（英）：PLASMA PROCESSING APPARATUS METHOD FOR OPERATING PLASMA PROCESSING APPARATUS AND POWER SUPPLY DEVICE
- 申请号：KR1020167031236 申请日：2015-06-01
- 公开(公告)号：KR102363557B1 公开(公告)日：2022-02-17
- 优先权： JPJP-P-2014-120251 2014-06-11
- 国际申请： PCT/JP2015/065771 2015-06-01
- 国际公布： WO2015190336 2015-12-17
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; H01L21/67 ; H01L21/683 ; H05H1/46 ; H05B3/00 ; H01L21/02
A plasma processing apparatus according to an embodiment includes a processing container, a mounting table, a plurality of heaters, and a power supply device. The mounting table is provided in the processing container. The plurality of heaters are provided in the mounting table. The power supply device supplies electric power to the plurality of heaters. The power supply device includes a plurality of transformers and a plurality of zero-cross control type solid state relays (SSRs). The plurality of transformers are configured to step down a voltage from an alternating-current power source. Each of the plurality of transformers includes a primary coil and a secondary coil. The primary coil is connected to the alternating-current power source. Each of the plurality of SSRs is provided between one corresponding heater among the plurality of heaters and the secondary coil of one corresponding transformer among the plurality of transformers.
公开/授权文献:
- KR1020170009852A 플라즈마 처리 장치, 플라즈마 처리 장치의 운용 방법 및 급전 장치 公开/授权日：2017-01-25
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割 |
| ------------------H01L21/306 | ......化学或电处理，例如电解腐蚀 |
| --------------------H01L21/3065 | .......等离子腐蚀；活性离子腐蚀 |