基本信息:
- 专利标题： 부성미분저항 소자 제조방법
- 专利标题（英）：KR102234174B1 - Method for manufacturing negative differential resistance device
- 申请号：KR1020190113760 申请日：2019-09-16
- 公开(公告)号：KR102234174B1 公开(公告)日：2021-04-01
- 发明人： 박진홍 , 김관호 , 최재웅 , 이주희
- 申请人： 성균관대학교산학협력단
- 申请人地址： 경기도 수원시 장안구...
- 专利权人： 성균관대학교산학협력단
- 当前专利权人： 성균관대학교산학협력단
- 当前专利权人地址： 경기도 수원시 장안구...
- 代理人： 심경식; 홍성욱
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/02 ; H01L29/51
A method of manufacturing a negative differential resistance device according to a first embodiment of the present invention comprises: a first step of forming a first semiconductor on a substrate; A second step of forming a second semiconductor so as to contact an upper portion of one side of the first semiconductor; A third step of forming a third semiconductor to be spaced apart from the second semiconductor by a predetermined distance so as to contact a lower portion of the semiconductor; And a fourth step of forming a metal electrode on the other side of the first semiconductor and on one side on which the second and third semiconductors are formed; including three or more logics without increasing the area of the negative differential resistance element that occupies the chip significantly. There is an effect that can be used to implement a polynomial logic circuit capable of expressing a state.
公开/授权文献:
- KR1020210032240A 부성미분저항 소자 제조방법 公开/授权日：2021-03-24
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/78 | .....由绝缘栅产生场效应的 |
| ------------------H01L29/792 | ......带有电荷捕获栅绝缘体，例如MNOS存储晶体管 |