基本信息:
- 专利标题： 반도체 장치 및 그 제작 방법
- 专利标题（英）：KR102229728B1 - Semiconductor device and method for manufacturing the same
- 申请号：KR1020140048512 申请日：2014-04-23
- 公开(公告)号：KR102229728B1 公开(公告)日：2021-03-22
- 发明人： 노다코세이 , 토리우미사토시 , 타네무라카즈키
- 申请人： 가부시키가이샤 한도오따이 에네루기 켄큐쇼
- 申请人地址： 일본국 가나가와켄 아쓰기시 하세 ***
- 专利权人： 가부시키가이샤 한도오따이 에네루기 켄큐쇼
- 当前专利权人： 가부시키가이샤 한도오따이 에네루기 켄큐쇼
- 当前专利权人地址： 일본국 가나가와켄 아쓰기시 하세 ***
- 代理人： 장훈
- 优先权： JPJP-P-2013-094550 2013-04-26
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/318
The present invention improves electrical properties in a semiconductor device using an oxide semiconductor. In addition, a semiconductor device with little fluctuation in electrical characteristics and high reliability is produced.
An oxynitride insulating film that functions as a base insulating film, and a transistor provided in contact with the oxynitride insulating film, the transistor has an oxide semiconductor film in contact with the oxynitride insulating film that functions as a base insulating film. In addition, the sum of 2 times the amount of gas released from the oxynitride insulating film by heat treatment and the amount of gas having a mass charge ratio of 30 plus the amount of the gas having a mass charge ratio of 30 is 5×10
15 /cm
2 or more 5×10
16 /cm
2 or less, or 5×10
15 /cm
2 or more and 3×10
16 /cm
2 or less.
公开/授权文献:
- KR1020140128243A 반도체 장치 및 그 제작 방법 公开/授权日：2014-11-05
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/78 | .....由绝缘栅产生场效应的 |
| ------------------H01L29/786 | ......薄膜晶体管 |