基本信息:
- 专利标题： 나노구조 반도체 발광소자
- 专利标题（英）：KR102227771B1 - Nano-sturucture semiconductor light emitting device
- 申请号：KR1020140110721 申请日：2014-08-25
- 公开(公告)号：KR102227771B1 公开(公告)日：2021-03-16
- 发明人： 김정섭 , 서연우 , 이동건 , 정병규 , 천대명 , 최수정
- 申请人： 삼성전자주식회사
- 申请人地址： , Samsung-ro, Yeongtong-gu...
- 专利权人： 삼성전자주식회사
- 当前专利权人： 삼성전자주식회사
- 当前专利权人地址： , Samsung-ro, Yeongtong-gu...
- 代理人： 특허법인씨엔에스
- 主分类号： H01L33/20
- IPC分类号： H01L33/20
An embodiment of the present invention includes a base layer made of a first conductivity type nitride semiconductor, and a plurality of nano light-emitting structures disposed to be spaced apart from each other on the base layer, wherein each of the plurality of nano light-emitting structures 1 An active layer having a nanocore made of a conductive nitride semiconductor, a quantum well disposed on the surface of the nanocore and divided into first and second regions having different indium composition ratios according to the thickness direction, and an active layer disposed on the active layer. A nanostructured semiconductor light emitting device including a 2-conductivity nitride semiconductor layer, wherein the first region has an indium composition ratio greater than the indium composition ratio of the second region.
公开/授权文献:
- KR1020160025063A 나노구조 반도체 발광소자 公开/授权日：2016-03-08