A light emitting diode according to an embodiment includes: a semiconductor stack including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; a transparent electrode disposed on a partial region of the p-type semiconductor layer; a plurality of contact holes penetrating the p-type semiconductor layer and the active layer to expose the n-type semiconductor layer; a first bonding pad positioned on the p-type semiconductor layer, electrically insulated from the p-type semiconductor layer, and electrically connected to the n-type semiconductor; A second bonding pad positioned on the transparent electrode and electrically connected to the p-type semiconductor layer; A first extension part extending from the first bonding pad; And an insulating layer that insulates the first bonding pad and the first extension from the p-type semiconductor layer and the active layer, wherein the plurality of contact holes are adjacent to and along one edge of the p-type semiconductor layer, and the insulating layer is Each contact hole has an opening exposing the n-type semiconductor layer, and the first extension part is horizontally spaced apart from the transparent electrode, and makes contact with the n-type semiconductor layer within the openings of the insulating layer.