基本信息:
- 专利标题： 전자 장치 및 전자 장치의 제조 방법
- 专利标题（英）：KR20210027984A - Electronic device and method for manufacturing electronic device
- 申请号：KR20190109131 申请日：2019-09-03
- 公开(公告)号：KR20210027984A 公开(公告)日：2021-03-11
- 优先权： KR20190109131 2019-09-03
- 主分类号： H01L27/24
- IPC分类号： H01L27/24 ; H01L45/00
摘要：
반도체메모리는, 적어도하나의저저항영역들및 적어도하나의고저항영역들을포함하는물질막들; 상기물질막들과교대로적층되고, 상기물질막들에비해돌출된돌출부들을포함하는절연막들; 상기절연막들및 상기저저항영역들을관통하는도전성필라들; 상기돌출부들의사이에위치된도전막들; 상기저저항영역들과상기도전막들의사이에개재된가변저항막들을포함할수 있다.
摘要（英）：
The semiconductor memory includes material films including at least one low resistance region and at least one high resistance region; Insulating layers alternately stacked with the material layers and including protrusions protruding from the material layers; Conductive pillars penetrating the insulating layers and the low resistance regions; Conductive layers positioned between the protrusions; Variable resistance layers interposed between the low resistance regions and the conductive layers may be included.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
| --------H01L27/24 | .包括无电位跃变势垒或表面势垒的用于整流、放大，或切换的固态组件的 |