In some embodiments of the method, patterning the opening includes projecting radiation toward the second dielectric layer, the radiation having a pattern of the opening. In some embodiments of the method, the single patterning photolithography process is an Extreme Ultraviolet (EUV) lithography process. In some embodiments of the method, filling the opening with a conductive material includes plating a conductive material onto the opening; And planarizing the conductive material and the second dielectric layer to form a first metal line with the remaining portion of the conductive material, wherein the top surfaces of the first metal line and the second dielectric layer are flat after the planarization.