基本信息:
- 专利标题： 반도체 논리 소자 및 논리 회로
- 专利标题（英）：KR20180048441A - Semiconductor logic device and a logic circuit
- 申请号：KR20177022176 申请日：2016-01-13
- 公开(公告)号：KR20180048441A 公开(公告)日：2018-05-10
- 优先权： FI20150011 2015-01-14; FI20150088 2015-02-05; FI20150089 2015-02-17; FI20150145 2015-05-20
- 主分类号： H01L27/098
- IPC分类号： H01L27/098 ; H01L27/02 ; H01L27/092 ; H01L27/12 ; H01L29/06 ; H01L29/78 ; H03K19/00 ; H03K19/003 ; H03K19/094 ; H03K19/0952 ; H03K19/20
摘要：
본발명은제1 전도타입의전계효과트랜지스터및 제2 타입의전계효과트랜지스터를포함하는반도체논리소자에관한것이다. 제1 FET의게이트는상기반도에논리소자의입력이고, 제2 FET의드레인은상기반도에논리소자의출력으로서지칭되고또한상기제2 FET의소스는상기반도체논리소자의소스이다. 상기전계효과트랜지스터들의단자들에적용가능한전위들을적용하는것에의해상기논리소자의출력의상태에영향을주는것이가능하다. 본발명은또한설명된논리소자를포함하는다른종류의논리회로부들에관한것이다.
摘要（英）：
The present invention relates to a semiconductor logic device including a field effect transistor of the first conductivity type field effect transistor and a second type. The gate of the FET 1 is the input of the logic element in the Peninsula, the drain of the FET 2 is referred to as an output of the logic element in the semiconductive also a source of the second FET 2 is the source of the semiconductor logic element. By applying a potential voltage applied to the terminals of the field-effect transistor, it is possible to influence the state of the output of the logic device. The present invention relates to a different type of logic circuit sections, which also includes a logic device description.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
| --------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
| ----------H01L27/04 | ..其衬底为半导体的 |
| ------------H01L27/06 | ...在非重复结构中包括有多个单个组件的 |
| --------------H01L27/085 | ....只包含场效应的组件 |
| ----------------H01L27/098 | .....有PN结栅极场效应晶体管的组件 |