基本信息:
- 专利标题： 홀 효과 센싱 요소
- 专利标题（英）：Hall-effect sensing element
- 专利标题（中）：霍尔效应传感元件
- 申请号：KR1020177031854 申请日：2016-04-01
- 公开(公告)号：KR1020170135897A 公开(公告)日：2017-12-08
- 发明人： 테일러,윌리암,피. , 웡,하리안토
- 申请人： 알레그로 마이크로시스템스, 엘엘씨
- 申请人地址： *** Northeast Cutoff, Worcester, Massachusetts *****-**** USA
- 专利权人： 알레그로 마이크로시스템스, 엘엘씨
- 当前专利权人： 알레그로 마이크로시스템스, 엘엘씨
- 当前专利权人地址： *** Northeast Cutoff, Worcester, Massachusetts *****-**** USA
- 代理人： 박영우
- 优先权： US62/145,806 2015-04-10
- 国际申请： PCT/US2016/025547 2016-04-01
- 国际公布： WO2016164265 2016-10-13
- 主分类号： H01L43/06
- IPC分类号： H01L43/06 ; H01L43/04 ; H01L43/14 ; H01L43/10 ; G01R33/07
In one aspect, the Hall effect sensing element 100 is in direct contact with the hole plate 114 and the hole plate having a thickness less than about 100 nanometers, from about 0.1 nanometers to having about 5 nanometers thick It includes an adhesion layer 110. In another aspect, the sensor includes a Hall effect sensing element. The Hall effect sensing element 100 'has a substrate 102, the substrate and the insulating layer 106 in which an integrated touch, from about 0.1 nanometers to 5 nanometers thickness of including one of the semiconductor material or insulator material and a bonding layer 110, and hole plate 114 having a size smaller than about 100 nanometers, and in direct contact with the adhesive layer being in direct contact with the insulating layer.
公开/授权文献:
- KR102469715B1 홀 효과 센싱 요소 公开/授权日：2022-11-22
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L43/00 | 应用电—磁或者类似磁效应的器件；专门适用于制造或处理这些器件或其部件的方法或设备 |
| --------H01L43/06 | .霍尔效应器件 |