基本信息:
- 专利标题： 기판 상에 구리 표면을 캡핑하기 위한 방법
- 专利标题（英）：A method for capping a copper surface on a substrate
- 申请号：KR1020177033840 申请日：2009-04-29
- 公开(公告)号：KR1020170132901A 公开(公告)日：2017-12-04
- 发明人： 유,상호 , 모래스,케빈 , 간구리,세샤드리 , 츙,후아 , 판,시-잉
- 申请人： 어플라이드 머티어리얼스, 인코포레이티드
- 申请人地址： **** Bowers Avenue, Santa Clara, CA *****, U.S.A.
- 专利权人： 어플라이드 머티어리얼스, 인코포레이티드
- 当前专利权人： 어플라이드 머티어리얼스, 인코포레이티드
- 当前专利权人地址： **** Bowers Avenue, Santa Clara, CA *****, U.S.A.
- 代理人： 특허법인 남앤드남
- 优先权： US12/111,921 2008-04-29
- 国际申请： PCT/US2009/042030 2009-04-29
- 国际公布： WO2009134840 2009-11-05
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; C23C16/16 ; C23C16/02 ; C23C16/18 ; H01L21/02 ; H01L21/768
Embodiments of the present invention provides a process to selectively form a cobalt layer on the copper surface on the exposed dielectric. And exposing the contaminated copper surface of the substrate in the processing chamber, forming a metallic copper surface during the treatment step in the reducing agent, - in one embodiment, there is provided a method for capping a copper surface on a substrate, the method pre- while exposed the dielectric surface during a vapor deposition process the metallic copper step of on the surface or above to selectively form a cobalt capping layer exposing the substrate to a cobalt precursor gas, and the cobalt capping layer and the dielectric surface on or dielectric over and a step of depositing a barrier layer. In another embodiment, the deposition process cycle is then carried out by continuing the vapor deposition process - comprising the step of performing a treatment process, the treatment is repeated deposition cycles to form a plurality of cobalt capping layer.
公开/授权文献:
- KR101938841B1 기판 상에 구리 표면을 캡핑하기 위한 방법 公开/授权日：2019-01-15
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/283 | .....用于电极的导电材料或绝缘材料的沉积 |
| ------------------H01L21/285 | ......气体或蒸气的沉积，例如冷凝 |