基本信息:
- 专利标题： FINFET 및 FINFET 형성 방법
- 专利标题（英）：Finfets and methods of forming finfets
- 专利标题（中）：形成FINFET和FINFET的方法
- 申请号：KR1020160135160 申请日：2016-10-18
- 公开(公告)号：KR1020170121667A 公开(公告)日：2017-11-02
- 发明人： 쳉퉁웬 , 로웨이양 , 첸치산
- 申请人： 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드
- 申请人地址： No. *, Li-Hsin Road *, Hsinchu Science Park, Hsinchu, Taiwan
- 专利权人： 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드
- 当前专利权人： 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드
- 当前专利权人地址： No. *, Li-Hsin Road *, Hsinchu Science Park, Hsinchu, Taiwan
- 代理人： 김태홍; 김진회
- 优先权： US62/327,135 2016-04-25; US15/200,770 2016-07-01
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66
Embodiment is a structure, the structure is the substrate above the first pin, the substrate second pin above said second pin is also adjacent to the first fin-first pin and the isolation surrounding the second pin sites - the a first portion of the isolation region is located between the first pin and the second pin-first pin and following the side wall of the second pin gate structure above the upper surface, wherein the gate structure includes a channel in the first pin and second pin defining a region, a gate seal on the side walls of the gate structure, spacers located on a first portion of the isolation region between the first portion of the gate seal spacer first pin and the second pin-first adjacent, and the gate structure the pin 1 and the include source / drain region on the second fin.
公开/授权文献:
- KR101946689B1 FINFET 및 FINFET 형성 방법 公开/授权日：2019-02-11
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/78 | .....由绝缘栅产生场效应的 |