基本信息:
- 专利标题： 반도체 장치
- 专利标题（英）：Semiconductor device
- 专利标题（中）：半导体器件
- 申请号：KR1020177020906 申请日：2015-01-27
- 公开(公告)号：KR1020170100629A 公开(公告)日：2017-09-04
- 发明人： 나카무라가츠미
- 申请人： 미쓰비시덴키 가부시키가이샤
- 申请人地址： *-*, Marunouchi *-Chome, Chiyoda-ku, Tokyo ***-**** Japan
- 专利权人： 미쓰비시덴키 가부시키가이샤
- 当前专利权人： 미쓰비시덴키 가부시키가이샤
- 当前专利权人地址： *-*, Marunouchi *-Chome, Chiyoda-ku, Tokyo ***-**** Japan
- 代理人： 제일특허법인
- 国际申请： PCT/JP2015/052193 2015-01-27
- 国际公布： WO2016120999 2016-08-04
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L29/78 ; H01L29/861 ; H01L29/868
The present invention, the structure of a semiconductor device which can achieve a stable dielectric breakdown voltage, an improvement in the off according to the reduction of the leakage current at the time of OPRoS reduced, controllability of the improvement of the turn-off operation, and a block at the time of turn-off capability to provide for the purpose. The present invention is a semiconductor device of a vertical type, such as IGBT or a diode, N-N side if with respect to the drift layer (14) has an N buffer layer 15 is formed adjacent the drift layer 14, N in the main part of the buffer layer of the buffer layer 15, in the direction toward the when the upper surface, the depth quantity TB (㎛), gradient δ derived by the one displacement with an impurity concentration of CB (㎝ -3) is {0.03 the concentration gradient conditions specified in ≤δ≤0.7} is satisfied.
公开/授权文献:
- KR101970087B1 반도체 장치 公开/授权日：2019-04-17
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/72 | ....晶体管型器件，如连续响应于所施加的控制信号的 |
| ----------------H01L29/739 | .....受场效应控制的 |