An object of the present invention is to provide a method for generating a SiC wafer can be generated efficiently SiC wafer from the SiC ingot.
As a generation method of the SiC wafer, by placing the light-converging point of the laser beam with a wavelength having light-transmitting properties with respect to SiC ingot to a depth corresponding to the thickness of the wafer to be generated from the end face of the SiC ingot, relative to the light-converging point and the SiC ingot by moving the irradiated on the end face said laser beam, to form a crack extending from the end surface the reforming layer and the reforming layer parallel to and then subjected to a separation starting point-forming step and the separation starting point forming method comprising: a separation starting point , in the starting forming the separating plate with water corresponding to the thickness of the wafer from the separation starting point and a wafer separation step of generating a SiC wafer and removed from the SiC ingot, the numerical aperture of the condenser lens to form a light-converging point to the set to from 0.45 to 0.9, and it is substantially set to the 5 to 50 M ² factor of the laser beam diameter φ of the light-converging point 15 is set to ㎛~φ150 ㎛.