基本信息:
- 专利标题: 양자점을 포함하는 전자 소자
- 专利标题(英):Electronic devices including quantum dots
- 专利标题(中):电子设备包括量子点
- 申请号:KR1020160183037 申请日:2016-12-29
- 公开(公告)号:KR1020170078553A 公开(公告)日:2017-07-07
- 发明人: 김태형 , 민지현 , 김용욱 , 장은주
- 申请人: 삼성전자주식회사
- 申请人地址: ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 专利权人: 삼성전자주식회사
- 当前专利权人: 삼성전자주식회사
- 当前专利权人地址: ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 代理人: 팬코리아특허법인
- 优先权: KR1020150189007 2015-12-29
- 主分类号: H01L33/04
- IPC分类号: H01L33/04 ; H01L33/50 ; H01L33/26
440 nm to 480 nm light source having the emission peak wavelength (emission peak wavelength) between; And comprising: a light conversion layer arranged over the light source, the light conversion layer and a second quantum dot that emits the first quantum dot and the green light, which emits red light, at least one of the first quantum dot and the second quantum dot are, perovskite comprises a perovskite crystal structure having the quantum dots, the quantum dots is a perovskite to an electronic component comprising a compound is represented by the following general formula (1):
Formula 1
3 ABX
+ α
Here, A is Rb, Cs, Fr, and a Group IA metal, NR is selected from a combination of
4+
And (R is a hydrogen atom or a substituted or unsubstituted C1 to straight-chain or group of branched-chain C10
substituted), [CH (NH 2) 2] +, or a combination thereof, B, Ge, Si, Sn, Pb, and a Group IVA metal is selected from a combination thereof, X is F, Cl, Br, and at least one halogen selected from I, BF
4
-, and or a combination thereof, α is a number of 0 to 3.