基本信息:
- 专利标题： 효율적인 스핀 전달 토크를 위한 향상된 스핀 홀 효과에 기초한 회로들 및 디바이스들
- 专利标题（英）：Circuits and devices based on enhanced spin hall effect for efficient spin transfer torque
- 专利标题（中）：基于改进自旋霍尔效应的有效自旋转移力矩电路与器件
- 申请号：KR1020177004415 申请日：2015-07-17
- 公开(公告)号：KR1020170041749A 公开(公告)日：2017-04-17
- 发明人： 버만,로버트에이. , 응우옌,민-하이 , 파이,치-펭 , 랄프,다니엘씨.
- 申请人： 코넬 유니버시티
- 申请人地址： Center for Technology Licensing at Cornell University (CTL), *** Pine Tree Road, Suite ***, Ithaca, New York *****, U.S.A.
- 专利权人： 코넬 유니버시티
- 当前专利权人： 코넬 유니버시티
- 当前专利权人地址： Center for Technology Licensing at Cornell University (CTL), *** Pine Tree Road, Suite ***, Ithaca, New York *****, U.S.A.
- 代理人： 특허법인(유)화우
- 优先权： US62/026,012 2014-07-17; US62/063,337 2014-10-13; US62/082,048 2014-11-19
- 国际申请： PCT/US2015/041039 2015-07-17
- 国际公布： WO2016011435 2016-01-21
- 主分类号： G11C11/16
- IPC分类号： G11C11/16 ; G11C11/18 ; H01L27/22 ; H01L29/66 ; H01L43/08
摘要：
다양한적용을위해자기자유층에커플링된스핀홀 효과(SHE) 금속층을이용함으로써스핀토크전달(STT) 및스핀홀 효과에기초한디바이스들또는회로들이개시된다. SHE 및 STT의이러한조합에기초한 STT 효과의효율또는세기는 SHE 금속층과자기자유층 사이의계면변형에의해, 또는특정불순물또는다른수단으로 SHE 금속을도핑함으로써 SHE 금속층을변형또는가공함에의해향상될수 있다.
摘要（中）：
基于所述自旋力矩转移（STT）和自旋霍尔效应装置或电路通过使用用于各种应用的自由磁性层上的耦合自旋霍尔效应（SHE）金属层进行说明。 效率或基于SHE的这种组合的STT效果的强度，和STT将由作为SHE金属层和由层，或某些杂质，或者所述材料的SHE金属层之间的界面应变的装置的自自由通过其他手段掺杂到SHE金属可以改善 有。
摘要（英）：
The devices or circuit based on the spin torque transfer (STT) and the spin Hall effect are described by using a coupled spin Hall effect (SHE) metal layer on the free magnetic layer for a variety of applications. Efficiency or strength of the STT effect based on such a combination of SHE, and STT will By by interfacial strain between SHE metal layer and the magnetic free layer, or of the materials to SHE metal layer by doping the SHE metal with a specific impurity or other means It can be improved.
公开/授权文献:
- KR102419536B1 효율적인 스핀 전달 토크를 위한 향상된 스핀 홀 효과에 기초한 회로들 및 디바이스들 公开/授权日：2022-07-11
信息查询:
EspacenetIPC结构图谱:
| G11C11/56 | 组优先于G11C11/02至G11C11/54中各组。 |
| --G11C11/02 | .应用磁性元件的 |
| ----G11C11/16 | ..应用磁自旋效应的存储元件的 |