The present invention is intended to provide the top surface of hexagonal crystal forming process of the wafers that can be economically produced as a single crystal wafer having a specified off-angle from the upper surface of a hexagonal single crystal wafer that matches the c-plane.
As the c-plane method for generating a is exposed on the upper surface of the c-plane and perpendicular to the wafer to produce a wafer having an off-angle of α from the hexagonal single crystal ingot having c-axis of the hexagonal crystal in the support table through the wedge-shaped member in a wedge angle α and supporting the positive single crystal ingot, in a support comprising: inclined by angle (α) off against the upper surface to the horizontal surface, the first depth of the light-converging point of the laser beam with a wavelength having light-transmitting properties with respect to the hexagonal single crystal ingot from the top surface position Sikkim and in addition, the light-converging point and the hexagonal crystal was relatively moved in a first direction in which the off angle (α) perpendicular to the second direction to form a single crystal ingot is irradiated with a laser beam to the upper surface, the hexagonal and modification layer forming step of forming a crack which extends along the c-plane from the straight line of the reforming layer and the reforming layer on the inside of the single crystal ingots, the second By relatively moving the light-converging point in a direction and a predetermined amount of indexing, the indexing step of transferring.