基本信息:
- 专利标题： 광 검출 소자
- 专利标题（英）：Light detecting device
- 专利标题（中）：光检测装置
- 申请号：KR1020150068990 申请日：2015-05-18
- 公开(公告)号：KR1020160135540A 公开(公告)日：2016-11-28
- 发明人： 박기연 , 한건우 , 이충민 , 이수현
- 申请人： 서울바이오시스 주식회사
- 申请人地址： *B-**, **-**, Sandan-ro ***beon-gil, Danwon-gu, Ansan-si, Gyeonggi-do, Republic of Korea
- 专利权人： 서울바이오시스 주식회사
- 当前专利权人： 서울바이오시스 주식회사
- 当前专利权人地址： *B-**, **-**, Sandan-ro ***beon-gil, Danwon-gu, Ansan-si, Gyeonggi-do, Republic of Korea
- 代理人： 특허법인에이아이피
- 主分类号： H01L31/08
- IPC分类号： H01L31/08 ; G01J1/42 ; H01L31/0216 ; H01L31/0272
摘要：
광검출소자가개시된다. 광검출소자는, 제1 질화물층; 제1 질화물층상에위치하며, 언도프질화물계반도체를포함하는 ESD(정전기방전) 방지층; ESD 방지층상에위치하는광 흡수층; 광흡수층상에위치하는쇼트키접합층; 및쇼트키접합층및 제1 질화물층각각에전기적으로연결된제1 전극및 제2 전극을포함하며, ESD 방지층의평균 n형도펀트도핑농도는제1 질화물층의평균 n형도펀트도핑농도보다낮다.
摘要（英）：
A light detecting element are provided. The optical detection device includes a first nitride layer; A first position on the nitride layer, and an undoped ESD (electrostatic discharge) including a nitride-based semiconductor layer; A light absorbing layer which is located on the ESD prevention layer; The Schottky junction layer on the light absorption layer; And the Schottky junction layer, and a first and a first electrode and a second electrode electrically connected to each of the nitride layer, the average n-type dopant, the doping concentration of the ESD prevention layer is lower than the average of the n-type dopant, the doping concentration of the first nitride layer.