基本信息:
- 专利标题： 후막 저항체 및 그 제조방법
- 专利标题（英）：Thin film resistive body and production method for same
- 专利标题（中）：薄膜电阻体及其生产方法
- 申请号：KR1020167027057 申请日：2015-08-20
- 公开(公告)号：KR1020160134703A 公开(公告)日：2016-11-23
- 发明人： 마시마히로시 , 모로후지유카리
- 申请人： 소에이 가가쿠 고교 가부시키가이샤
- 申请人地址： 일본국 도쿄도 신주쿠구 니시신주쿠 *초메 *반 *고
- 专利权人： 소에이 가가쿠 고교 가부시키가이샤
- 当前专利权人： 소에이 가가쿠 고교 가부시키가이샤
- 当前专利权人地址： 일본국 도쿄도 신주쿠구 니시신주쿠 *초메 *반 *고
- 代理人： 강일우
- 优先权： JPJP-P-2014-185800 2014-09-12
- 国际申请： PCT/JP2015/073358 2015-08-20
- 国际公布： WO2016039108 2016-03-17
- 主分类号： H01C17/065
- IPC分类号： H01C17/065 ; H01C7/00 ; C03C8/02 ; H01B13/00 ; H01B1/22
The present invention excludes the harmful lead from the conductive component and glass, and the addition in the characteristics such as large resistance the resistance value at the station, TCR characteristics, current noise characteristics, withstand voltage characteristics, equivalent to the prior art or one provided with a more excellent properties for its object to provide a thick film resistor.
The present invention provides a thick-film resistor made of a fired product of the resist composition, the ruthenium-based conductive particles comprising a ruthenium dioxide, comprising a glass component which does not contain a lead component in a substantially, 100Ω / □ ~10㏁ / □ range It has in the resistance value, the resistance temperature coefficient of the thick film resistor than ± 100ppm / ℃.
公开/授权文献:
- KR101747621B1 후막 저항체 및 그 제조방법 公开/授权日：2017-06-14
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01C | 电阻器 |
| ------H01C17/00 | 制造电阻器的专用设备或方法 |
| --------H01C17/06 | .适用于在基片上涂敷电阻材料的 |
| ----------H01C17/065 | ..用厚膜工艺的，例如丝网印刷的 |