基本信息:
- 专利标题： 단결정 성장용 히터 및 이를 이용한 단결정 성장장치 및 성장방법.
- 专利标题（英）：Heater for growing single crystal and single crystal grower using it and method for growing single crystal
- 专利标题（中）：用于生长单晶和单晶水晶的加热器及其用于生长单晶的方法
- 申请号：KR1020150010420 申请日：2015-01-22
- 公开(公告)号：KR1020160090528A 公开(公告)日：2016-08-01
- 发明人： 이희춘 , 최이식 , 문성환 , 장계원 , 나복기 , 배영숙
- 申请人： 주식회사 사파이어테크놀로지
- 申请人地址： 경기도 화성시 향남읍 발안공단로*길 **
- 专利权人： 주식회사 사파이어테크놀로지
- 当前专利权人： 주식회사 사파이어테크놀로지
- 当前专利权人地址： 경기도 화성시 향남읍 발안공단로*길 **
- 代理人： 특허법인주원
- 主分类号： C30B11/00
- IPC分类号： C30B11/00 ; C30B29/20
The present invention relates to a single crystal growth apparatus and a growth method for growing a single crystal from a melt and heating the molten material around the seed crystal to the raw material to grow a single crystal. The single crystal growth for the heater is provided with a two-stage or more separate plurality of heaters in a direction perpendicular to the peripheral side portion of the crucible. Thereby, the crucible phase, can be controlled to a lower temperature gradient with larger, yet stably grow a large-diameter single crystal, and consists of a heating element for varying the width and thickness of the plurality of the heater unit, each in accordance with the position being vertical or horizontal direction with a temperature gradient can be increased.
公开/授权文献:
- KR101654856B1 단결정 성장용 히터 및 이를 이용한 단결정 성장장치 및 성장방법. 公开/授权日：2016-09-06