基本信息:
- 专利标题： 반도체 기판용 세정제 및 반도체 기판 표면의 처리방법
- 专利标题（英）：Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface
- 专利标题（中）：用于半导体基板的清洁剂和用于处理半导体基板表面的方法
- 申请号：KR1020167014158 申请日：2014-11-07
- 公开(公告)号：KR1020160083885A 公开(公告)日：2016-07-12
- 发明人： 카지카와타카유키 , 하야시코헤이 , 미즈타히로노리 , 와타히키츠토무
- 申请人： 와코 쥰야꾸 고교 가부시키가이샤
- 申请人地址： 일본 오사까시 쥬오구 도쇼마찌 *-*-*
- 专利权人： 와코 쥰야꾸 고교 가부시키가이샤
- 当前专利权人： 와코 쥰야꾸 고교 가부시키가이샤
- 当前专利权人地址： 일본 오사까시 쥬오구 도쇼마찌 *-*-*
- 代理人： 황이남
- 优先权： JPJP-P-2013-231989 2013-11-08
- 国际申请： PCT/JP2014/079651 2014-11-07
- 国际公布： WO2015068823 2015-05-14
- 主分类号： C11D7/32
- IPC分类号： C11D7/32 ; C11D11/00 ; H01L21/306 ; C11D17/00
The present invention, as the cleaning agent used in the process after the copper wiring film, or a copper alloy wiring film, and a semiconductor chemical mechanical polishing of a substrate having a film of cobalt-containing, organic acid represents the formula (A) of the present specification the substrate, (B) present specification general formula represents (B-1) of the substrate diamine, (B-2) amino dinryu, (B-3) azole and (B-4) pyrazine acids or the amine is selected from pyrimidyl dinryu, (C) hydroxy hydroxylamine derivative, and (D) containing a general formula that represents the oxygen scavenger of the present specification the substrate, the copper wiring film, or characterized in that the pH using a cleaning agent, and relevant cleaning agent for a semiconductor substrate, characterized in that more than 10 solution It relates to a method of processing a semiconductor substrate surface having copper alloy wiring film, a film containing cobalt.
公开/授权文献:
- KR102256773B1 반도체 기판용 세정제 및 반도체 기판 표면의 처리방법 公开/授权日：2021-05-27
信息查询:
EspacenetIPC结构图谱:
| C | 化学；冶金 |
| --C11 | 动物或植物油、脂、脂肪物质或蜡；由此制取的脂肪酸；洗涤剂；蜡烛 |
| ----C11D | 洗涤剂组合物；用单一物质作为洗涤剂；皂或制皂；树脂皂；甘油的回收 |
| ------C11D7/00 | 主要以非表面活性化合物为基料的洗涤剂组合物 |
| --------C11D7/02 | .无机化合物 |
| ----------C11D7/32 | ..含氮的 |