基本信息:
- 专利标题： 나노구조 반도체 발광소자
- 专利标题（英）：Nano-sturucture semiconductor light emitting device
- 专利标题（中）：纳米扫描半导体发光器件
- 申请号：KR1020140151520 申请日：2014-11-03
- 公开(公告)号：KR1020160053346A 公开(公告)日：2016-05-13
- 发明人： 황경욱
- 申请人： 삼성전자주식회사
- 申请人地址： ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 专利权人： 삼성전자주식회사
- 当前专利权人： 삼성전자주식회사
- 当前专利权人地址： ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 代理人： 특허법인씨엔에스
- 主分类号： H01L33/20
- IPC分类号： H01L33/20
摘要：
본발명의일 실시예는제1 도전형반도체로이루어진베이스층; 상기베이스층의상면에배치되며, 복수의개구를갖는제1 영역과상기복수의개구에각각위치하며상기제1 영역과는이격된복수의제2 영역을갖는절연막; 상기제2 영역상에배치된유전체나노코어; 및상기유전체나노코어상에순차적으로배치된제1 도전형반도체층, 활성층및 제2 도전형반도체층을갖는복수의나노발광구조물을포함하는것을특징으로하는나노구조반도체발광소자를제공한다.
摘要（中）：
根据本发明的实施例，提供一种纳米结构半导体发光器件，包括：由第一导电型半导体构成的基极层; 绝缘层，其包括第一区域和第二区域，其中所述第一区域布置在所述基底层的上表面上并且具有多个开口，并且所述第二区域被放置在每个所述开口上并与 第一区; 布置在所述第二区域中的电介质纳米芯; 以及多个纳米发光结构，其具有连续堆叠在所述电介质纳米芯上的第一导电型半导体层，有源层和第二导电型半导体层。 根据本发明，纳米结构半导体发光器件能够减轻电流泄漏问题。
摘要（英）：
One embodiment of the invention the base layer of a first conductivity type semiconductor; Disposed on the upper surface of the base layer, respectively, located in the first region and the opening of the plurality having a plurality of apertures, and an insulating film having a plurality of second regions is spaced apart from the first area; The dielectric nano core disposed on the second region; And it provides a nanostructured semiconductor light-emitting device comprising a plurality of nano-emitting structure having a first conductive type semiconductor layer, active layer and second conductive type semiconductor layer are sequentially disposed on the dielectric nano-core.
公开/授权文献:
- KR102212557B1 나노구조 반도체 발광소자 公开/授权日：2021-02-08