基本信息:
- 专利标题: 무전해 도금액을 이용한 관통전극의 형성방법
- 专利标题(英):Method for forming through electrodes using electroless plating solution
- 专利标题(中):通过电解镀层溶液形成电极的方法
- 申请号:KR1020150001759 申请日:2015-01-07
- 公开(公告)号:KR1020150099392A 公开(公告)日:2015-08-31
- 发明人: 타나카,케이이치 , 퍼다나푸트라,프리앙가
- 申请人: 미쯔비시 가스 케미칼 컴파니, 인코포레이티드
- 申请人地址: 일본 도꾜 ***-**** 찌요다구 마루노우찌 *-쪼메 *-*
- 专利权人: 미쯔비시 가스 케미칼 컴파니, 인코포레이티드
- 当前专利权人: 미쯔비시 가스 케미칼 컴파니, 인코포레이티드
- 当前专利权人地址: 일본 도꾜 ***-**** 찌요다구 마루노우찌 *-쪼메 *-*
- 代理人: 특허법인씨엔에스
- 优先权: JPJP-P-2014-031241 2014-02-21
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L21/48 ; H01L21/24
According to the present invention, there is provided a method for forming a through electrode, with respect to the side wall of the hole formed in the substrate (1), electroless cobalt plating, or electroless nickel plating solution containing at least a cobalt ions or nickel ions, a complexing agent, reducing agent and pH adjusting agent the use by the steps of: forming from the inlet of the hole to stop the diffusion barrier layer is a metal alloy of the copper at the central portion of the hole, (2) at least a polymer with cobalt ions or nickel ions, a complexing agent, reducing agent, pH adjusting agent and an amino group using a containing electroless cobalt plating, or electroless nickel plating solution, by using a process, and (3), electroless copper plating solution to form from the central portion of the aperture membrane diffusion barrier layer of a metal alloy in the bottom of the hole (1) and step (2) a step of depositing a copper seed layer on the diffusion barrier layer formed by the process, to provide a method of forming the penetrating electrode Can.
公开/授权文献:
- KR102264033B1 무전해 도금액을 이용한 관통전극의 형성방법 公开/授权日:2021-06-11
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置;专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |
----------H01L21/71 | ..限定在组H01L21/70中的器件的特殊部件的制造 |
------------H01L21/768 | ...利用互连在器件中的分离元件间传输电流 |