基本信息:
- 专利标题： EUV 리소그래피용 반사 광학 소자 및 반사 광학 소자의 제조 방법
- 专利标题（英）：Reflective optical element for euv lithography and method of manufacturing a reflective optical element
- 专利标题（中）：反射光学元件的反射光学元件和制造反射光学元件的方法
- 申请号：KR1020157017603 申请日：2013-12-05
- 公开(公告)号：KR1020150092240A 公开(公告)日：2015-08-12
- 发明人： 바브라노르베르트 , 비트너보리스 , 폰호덴베르크마르틴 , 엔키쉬하르트무트 , 뮐렌더슈테판 , 콘라디올라프
- 申请人： 칼 짜이스 에스엠테 게엠베하
- 申请人地址： Rudolf-Eber-Strasse *, ***** Oberkochen, Germany
- 专利权人： 칼 짜이스 에스엠테 게엠베하
- 当前专利权人： 칼 짜이스 에스엠테 게엠베하
- 当前专利权人地址： Rudolf-Eber-Strasse *, ***** Oberkochen, Germany
- 代理人： 양영준; 안국찬
- 优先权： DE10 2012 222 4661 2012-12-06; US61/734,183 2012-12-06
- 国际申请： PCT/EP2013/075620 2013-12-05
- 国际公布： WO2014086905 2014-06-12
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F1/22 ; G02B5/08 ; G02B17/06 ; G02B27/10 ; G21K1/06
The invention reflection of incident electromagnetic radiation having an operating wavelength within the EUV range will not only reflective optical elements of the optical system for EUV lithography, a method for producing a reflective optical element of the optical system for EUV lithography, the reflective optical element 20 a multi-layer system, comprising a multi-layer system having a wave reflection phase (φ) (23, 83) and, a capping layer (25, 85) made from a capping material, and steps of the methods for: the cap for the capping layer material, this method comprising accordance phase of the reflected waves determining the dependency which changes according to the thickness of the capping layer, the phase of the reflected wave change substantially linearly with the thickness of the capping layer (25, 85) determining a linear region of the dependencies, and the thickness profile in the capping layer (25, 85) so that both of the maximum thickness and the minimum thickness of the thickness profile in the linear region To include the step of generating.
公开/授权文献:
- KR102127230B1 EUV 리소그래피용 반사 광학 소자 및 반사 광학 소자의 제조 방법 公开/授权日：2020-07-07