基本信息:
- 专利标题： 수직형 반도체 장치 및 그 제조 방법
- 专利标题（英）：Vertical Type Semiconductor Apparatus and Fabrication Method Thereof
- 专利标题（中）：垂直型半导体器件及其制造方法
- 申请号：KR1020130145242 申请日：2013-11-27
- 公开(公告)号：KR1020150061678A 公开(公告)日：2015-06-05
- 发明人： 오동연 , 최강식
- 申请人： 에스케이하이닉스 주식회사
- 申请人地址： 경기도 이천시 부발읍 경충대로 ****
- 专利权人： 에스케이하이닉스 주식회사
- 当前专利权人： 에스케이하이닉스 주식회사
- 当前专利权人地址： 경기도 이천시 부발읍 경충대로 ****
- 代理人： 김성남
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8239
A vertical semiconductor device according to an embodiment of the present technology, is formed on the semiconductor substrate, the size specified in the inside from the first region and the semiconductor substrate surface, comprising at least one semiconductor element comprising a gate conductive layer that surrounds the vertical channel non-active area and, from the non-active area comprises at least one of the first pillar is vertically extending in the semiconductor substrate, and at least either one of the first pillars formed by the for the gate contact has a lower height than the height of the gate conductive layer pillar, and it may include a second region including the gate contact is formed so as to be electrically connected to the gate conductive layer extending from the first area on the pillars for the gate contact.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/335 | .....场效应晶体管 |
| ------------------H01L21/336 | ......带有绝缘栅的 |