基本信息:
- 专利标题： 포토마스크의 제조 방법, 포토마스크, 패턴 전사 방법 및 표시 장치의 제조 방법
- 专利标题（英）：Method of manufacturing a photomask, photomask, pattern transfer method and method of manufacturing a display device
- 专利标题（中）：制造光电照相机的方法，照相机，图案转印方法和制造显示器件的方法
- 申请号：KR1020140161649 申请日：2014-11-19
- 公开(公告)号：KR1020150059611A 公开(公告)日：2015-06-01
- 发明人： 야마구찌노보루
- 申请人： 호야 가부시키가이샤
- 申请人地址： *-**-*, Nishi-Shinjuku, Shinjuku-ku, Tokyo, Japan
- 专利权人： 호야 가부시키가이샤
- 当前专利权人： 호야 가부시키가이샤
- 当前专利权人地址： *-**-*, Nishi-Shinjuku, Shinjuku-ku, Tokyo, Japan
- 代理人： 양영준; 박충범
- 优先权： JPJP-P-2013-241485 2013-11-22
- 主分类号： G03F1/26
- IPC分类号： G03F1/26 ; G03F1/68
The present invention will now be fine to task to manufacture a photo-mask having a transfer pattern with high precision. Method of manufacturing a photomask of the present invention, a transparent substrate on the lower layer film, intermediate film, the step of preparing the upper layer and the photo photomask blank resist film is formed, and subjected to drawing and pre-development in the photoresist film, the first resist a step of forming a pattern, and the upper film is etched using the first resist pattern as a mask, and, the by a first resist pattern or etched upper layer film mask, a first resist pattern, and pre-etch process, to etch the interlayer film hand, by carrying out the development for the second step of forming a resist pattern, and the second resist pattern as a mask, while performing additional etching of the upper layer film, and the etching the interlayer as a mask for etching the lower layer film, after the etching process has.
信息查询:
EspacenetIPC结构图谱:
| G | 物理 |
| --G03 | 摄影术；电影术；利用了光波以外其他波的类似技术；电记录术；全息摄影术 |
| ----G03F | 图纹面的照相制版工艺，例如，印刷工艺、半导体器件的加工工艺；其所用材料；其所用原版；其所用专用设备 |
| ------G03F1/00 | 用于图纹面的照相制版的原版的制备 |
| --------G03F1/26 | .相移掩膜 |