基本信息:
- 专利标题： 레지스트 조성물, 레지스트 패턴 형성 방법, 신규 화합물 및 산발생제
- 专利标题（英）：Resist composition, method of forming resist pattern, novel compound and acid generator
- 专利标题（中）：抗蚀剂组合物，形成抗蚀剂图案的方法，新型化合物和酸发生剂
- 申请号：KR1020150062227 申请日：2015-05-01
- 公开(公告)号：KR1020150058118A 公开(公告)日：2015-05-28
- 发明人： 하다히데오 , 우츠미요시유키 , 세시모다케히로 , 가와우에아키야
- 申请人： 도오꾜오까고오교 가부시끼가이샤
- 申请人地址： 일본국 가나가와껭 가와사끼시 나까하라구 나까마루꼬 ***반찌
- 专利权人： 도오꾜오까고오교 가부시끼가이샤
- 当前专利权人： 도오꾜오까고오교 가부시끼가이샤
- 当前专利权人地址： 일본국 가나가와껭 가와사끼시 나까하라구 나까마루꼬 ***반찌
- 代理人： 특허법인코리아나
- 优先权： JPJP-P-2008-291054 2008-11-13; JPJP-P-2008-291055 2008-11-13; JPJP-P-2008-291056 2008-11-13
- 主分类号： G03F7/004
- IPC分类号： G03F7/004 ; G03F7/039 ; G03F7/30 ; C07C309/12 ; C07C311/46 ; C07C311/48
Base component that is soluble in an alkaline developer changes by the action of an acid (A) and the formula (b1-1) represented by compounds formula (b1-1 ') represented by the compound and / or the formula (b1-1 ") a resist composition containing the component (B) an acid generator containing a compound represented by;
Formula 1
[Wherein, R
1 "~ R
3" represents an aryl group or an alkyl group, of which at least one is a substituted aryl group substituted with a represented by the following formula (b1-1-0), to which the two are bonded to each other formula It may also form a ring with the sulfur atom. X is a hydrocarbon group, Q
1 of 3 to 30 carbon atoms is a divalent linking group containing a carbonyl group, p is an integer of 1-3. X
10 represents a hydrocarbon group having a carbon number of 1 to 30, Q
3 is a single bond or a divalent linking group, Y
10 is -C (= O) - or -SO
2 -, Y
11 is an alkyl group or fluorinated alkyl group of 1 to 10 carbon atoms . Q
2 is a single bond or an alkylene group. W is an alkylene group having 2 to 10 carbon atoms.]
公开/授权文献:
- KR101565282B1 레지스트 조성물, 레지스트 패턴 형성 방법, 신규 화합물 및 산발생제 公开/授权日：2015-11-02