基本信息:
- 专利标题: 불휘발성 메모리 및 그것의 프로그램 방법
- 专利标题(英):Nonvolatile memory device and program method using thereof
- 专利标题(中):非易失性存储器件及其使用的程序方法
- 申请号:KR1020130111389 申请日:2013-09-16
- 公开(公告)号:KR1020150032389A 公开(公告)日:2015-03-26
- 发明人: 곽동훈 , 박기태
- 申请人: 삼성전자주식회사
- 申请人地址: ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 专利权人: 삼성전자주식회사
- 当前专利权人: 삼성전자주식회사
- 当前专利权人地址: ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 代理人: 특허법인 고려
- 主分类号: G11C16/10
- IPC分类号: G11C16/10
The present invention relates to a nonvolatile memory and its application method. Program method of the non-volatile memory device according to the present invention the non-volatile memory devices are vertically stacked, and comprising at least two cell strings that share a single bit line, the pre based on the disturbing environment between the cell string in response to the step of setting the charge condition, the cell string is not selected one of the cell strings to the pre-charging condition comprises program the memory cells included in the pre-occupied by step and cell string of a selected one of the cell strings. According to the non-volatile memory and its program, the method of the present invention, while being a precharge operation on the unselected bit lines can be performed in a disturbing environment adaptive program disturb is prevented it can accelerate the program speed.
公开/授权文献:
- KR102242022B1 불휘발성 메모리 및 그것의 프로그램 방법 公开/授权日:2021-04-21
信息查询:
EspacenetIPC结构图谱:
G | 物理 |
--G11 | 信息存储 |
----G11C | 静态存储器 |
------G11C16/00 | 可擦除可编程序只读存储器 |
--------G11C16/02 | .电可编程序的 |
----------G11C16/06 | ..辅助电路,例如,用于写入存储器的 |
------------G11C16/10 | ...编程或数据输入电路 |