基本信息:
- 专利标题： 관통 비아 구조체를 갖는 반도체 소자 제조 방법
- 专利标题（英）：Method of fabricating Semiconductor Devices Having TSV
- 专利标题（中）：制造具有TSV的半导体器件的方法
- 申请号：KR1020130103249 申请日：2013-08-29
- 公开(公告)号：KR1020150025582A 公开(公告)日：2015-03-11
- 发明人： 지상욱 , 박영렬 , 문형렬 , 이인겸
- 申请人： 삼성전자주식회사
- 申请人地址： ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 专利权人： 삼성전자주식회사
- 当前专利权人： 삼성전자주식회사
- 当前专利权人地址： ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 代理人： 특허법인 고려
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
Forming at least one unit device on the inner and the front substrate, and is spaced apart from the at least one unit element forms a through via structure having a rear end portion that includes and passes through the substrate perpendicularly, a recess, a front surface of the substrate, and the front end portion and electrically connected to the through via the front end and the through-via structure forming an internal circuit electrically connected to, and on the front surface of the substrate on the front end of said at least one unit element and the through-via-structure the structure of forming a front bump, and on the back surface of the substrate to form a wiring metal layer, which is electrically connected to the rear end of the through-via structure, and comprises the formation of a rear bump electrically connected to the wiring metal layer the semiconductor device manufacturing method is proposed.
公开/授权文献:
- KR102064863B1 관통 비아 구조체를 갖는 반도체 소자 제조 방법 公开/授权日：2020-01-10
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/48 | .用于向或自处于工作中的固态物体通电的装置，例如引线、接线端装置 |