基本信息:
- 专利标题: 반도체 장치 및 그의 제조 방법, 및 린스액
- 专利标题(英):Semiconductor device and method for manufacturing same, and rinsing fluid
- 专利标题(中):半导体器件及其制造方法和冲洗流体
- 申请号:KR1020157000349 申请日:2013-07-12
- 公开(公告)号:KR1020150020668A 公开(公告)日:2015-02-26
- 发明人: 오노쇼코 , 가야바야스히사 , 다나카히로후미 , 고무라가즈오 , 스즈키츠네지
- 申请人: 미쓰이 가가쿠 가부시키가이샤
- 申请人地址: *-*-*, Higashi-Shimbashi, Minato-ku, Tokyo, Japan
- 专利权人: 미쓰이 가가쿠 가부시키가이샤
- 当前专利权人: 미쓰이 가가쿠 가부시키가이샤
- 当前专利权人地址: *-*-*, Higashi-Shimbashi, Minato-ku, Tokyo, Japan
- 代理人: 제일특허법인
- 优先权: JPJP-P-2012-158979 2012-07-17; JPJP-P-2013-039944 2013-02-28
- 国际申请: PCT/JP2013/069225 2013-07-12
- 国际公布: WO2014013956 2014-01-23
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L21/02
In the present invention, the copper which is at least partially exposed on at least a portion of the interlayer insulating layer, and the bottom of the cavity has a concave portion on a semiconductor substrate having a wiring which includes, in the cationic functional group having a weight average molecular weight of the polymer 2000-1000000 containing and Na and K of the content is 10 mass ppb or less by providing a semiconductor sealing composition, a step of forming a sealing layer on at least the bottom of the cavity and the side and the side surface of the formed seal layer of the semiconductor substrate by element basis , by heat treatment under the following conditions temperature 425 ℃ more than 200 ℃, there is provided a method of manufacturing a semiconductor device having at least a step of removing a portion of the seal layer formed on the exposed surface of the wiring.
公开/授权文献:
- KR101682836B1 반도체 장치 및 그의 제조 방법, 및 린스액 公开/授权日:2016-12-05