基本信息:
- 专利标题： 수직형 갈륨나이트라이드 트랜지스터 및 그 제조방법
- 专利标题（英）：Vertical GaN transister and method of fabricating the same
- 专利标题（中）：垂直GaN转移器及其制造方法
- 申请号：KR1020130087317 申请日：2013-07-24
- 公开(公告)号：KR1020150012020A 公开(公告)日：2015-02-03
- 发明人： 타케야모토노부 , 이관현 , 곽준식 , 정영도 , 이강녕
- 申请人： 서울반도체 주식회사
- 申请人地址： 경기도 안산시 단원구 산단로***번길 **-** (원시동)
- 专利权人： 서울반도체 주식회사
- 当前专利权人： 서울반도체 주식회사
- 当前专利权人地址： 경기도 안산시 단원구 산단로***번길 **-** (원시동)
- 代理人： 특허법인에이아이피
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/335
Jikhyeong gallium nitride (GaN) transistor includes a substrate and, on the substrate a buffer layer and a mask layer pattern for exposing a part of the surface of the buffer layer on the buffer layer and a mask layer pattern, and the gallium nitride layer on the exposed surface of the buffer layer and a gallium first drift layer on the part of the surface of the nitride layer, a first second drift above the first drift layer exposed by the current blocking layer pattern and the current blocking layer pattern for exposing a part of the surface of the drift layer on the drift layer the donor layer and the second gate electrode, a donor layer and the contacts are disposed via a gate insulation layer on the drift layer that is placed on top so as to be surrounded by a layer and a channel layer above the current blocking layer pattern and the channel layer a current blocking layer pattern a drain electrode disposed on a gallium nitride layer to be the source electrode, and spaced apart from the first drift layer is arranged to be.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/778 | .....带有二维载流子气沟道的，如HEMT |