专利号KR1020140085276 | 연마 장치 및 연마 상태 감시 방법

专利标题： 연마 장치 및 연마 상태 감시 방법
专利标题（英）：Polishing apparatus and polished-state monitoring method
专利标题（中）：抛光装置和抛光状态监测方法
申请号：KR1020140085276 申请日：2014-07-08
公开(公告)号：KR1020150007967A 公开(公告)日：2015-01-21
发明人： 고바야시요이치 , 와타나베가츠히데 , 시오카와요이치 , 야기게이타 , 기노시타마사키
申请人： 가부시키가이샤 에바라 세이사꾸쇼
申请人地址： 일본국 도쿄도 오타쿠 하네다아사히쵸 **-*
专利权人： 가부시키가이샤 에바라 세이사꾸쇼
当前专利权人： 가부시키가이샤 에바라 세이사꾸쇼
当前专利权人地址： 일본국 도쿄도 오타쿠 하네다아사히쵸 **-*
代理人： 장수길; 성재동
优先权： JPJP-P-2013-145734 2013-07-11; JPJP-P-2013-150507 2013-07-19
主分类号： H01L21/304
IPC分类号： H01L21/304 ; H01L21/66

摘要：

An objective of the present invention is to provide a polishing apparatus capable of achieving a highly-precise polishing result. The polishing apparatus includes an in-line film-thickness measuring device (80) to measure a film thickness of a substrate in a stationary state, and an in-situ spectral film-thickness monitor (39) having a film thickness sensor (40) disposed in a polishing table (30A). The in-situ spectral film-thickness monitor (39) subtracts an initial film thickness, measured by the in-situ spectral film-thickness monitor (39) before the substrate is polished, from an initial film thickness, measured by the in-line film-thickness measuring device (80) before the substrate is polished, to determine a correction value, adds the correction value to a film thickness measured when the substrate is polished to obtain a monitoring film thickness, and monitors a progress of polishing of the substrate based on the monitoring film thickness.

摘要（中）：

本发明的目的是提供能够实现高精度抛光结果的抛光装置。抛光装置包括用于测量静止状态的基板的膜厚的直列式膜厚测量装置（80）和具有膜厚度传感器（40）的原位光谱膜厚监视器（39）设置在抛光台（30A）中。原位光谱膜厚度监测器（39）从原始光谱膜厚度监测器（39）在衬底抛光之前测量的初始膜厚度从初始膜厚度中减去初始膜厚度抛光基板之前的膜厚测量装置（80），以确定校正值，将修正值与抛光基板时测量的膜厚度相加以获得监控膜厚度，并监视基板的抛光进度基于监测膜厚度。

摘要（英）：

An object of the present invention is to provide a polishing apparatus which can realize the finishing performance with high accuracy. Grinding apparatus, in-line film thickness for measuring a film thickness of the substrate in a stationary measuring instrument 80 and, personnel yitu minutes When Romance film thickness monitor having a film thickness sensor (40) disposed within the polishing table (30A) (39) and a. HR acquired by yitu minutes When Romance film thickness monitor 39, in-line film thickness measuring instrument (80) early in the film from the thickness before grinding of the substrate personnel yitu minutes When Romance film thickness monitor (39) acquired by the before polishing of a substrate and the determining an initial calibration value by just subtracting the thickness and by adding the correction value to the thickness obtained during polishing of the substrate based on the film thickness of the obtained film thickness of the monitoring and surveillance monitor the progress of substrate polishing .

KR102048265B1 연마 장치 및 연마 상태 감시 방법 公开/授权日：2019-11-25

Espacenet

H	电学
--H01	基本电气元件
----H01L	半导体器件；其他类目未包含的电固体器件
------H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
--------H01L21/02	.半导体器件或其部件的制造或处理
----------H01L21/027	..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜
------------H01L21/18	...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
--------------H01L21/26	....用波或粒子辐射轰击的
----------------H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
------------------H01L21/304	......机械处理，例如研磨、抛光、切割

发明公开 KR1020150007967A 연마 장치 및 연마 상태 감시 방법 审中-实审

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