基本信息:
- 专利标题： 와이드 갭 반도체장치
- 专利标题（英）：Wide band gap semiconductor device
- 专利标题（中）：宽带宽半导体器件
- 申请号：KR1020140074047 申请日：2014-06-18
- 公开(公告)号：KR1020150005443A 公开(公告)日：2015-01-14
- 发明人： 수에카와에이스케 , 카구치나오토 , 이케가미마사아키
- 申请人： 미쓰비시덴키 가부시키가이샤
- 申请人地址： *-*, Marunouchi *-Chome, Chiyoda-ku, Tokyo ***-**** Japan
- 专利权人： 미쓰비시덴키 가부시키가이샤
- 当前专利权人： 미쓰비시덴키 가부시키가이샤
- 当前专利权人地址： *-*, Marunouchi *-Chome, Chiyoda-ku, Tokyo ***-**** Japan
- 代理人： 이화익; 김홍두
- 优先权： JPJP-P-2013-140348 2013-07-04
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/335 ; H01L21/31
The present invention, without increasing the chip cost, inhibits the electrostatic breakdown between the gate electrode and the source electrode. The present invention, p base layer (3A) held between the field insulating film 11 in the surface layer, n + source layer 4 and the same process, the second source layer (n + source layer (4A)) formed in the at least field It is formed on the insulating film 11, a gate polysilicon 7 and the same layer, the second gate electrode (gate polysilicon (7A)) and, formed on the second source layer of the one side, the second gate electrode and electrically connected a third gate electrode (gate electrode 12) and, a second source electrode (source electrode (9A)), a second source layer formed on the other side.
公开/授权文献:
- KR101596235B1 와이드 갭 반도체장치 公开/授权日：2016-02-22
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/78 | .....由绝缘栅产生场效应的 |