基本信息:
- 专利标题: 미러 배열체를 생산하기 위한 방법 및 리소그래피 장치
- 专利标题(英):Lithography apparatus and method for producing a mirror arrangement
- 专利标题(中):用于生产镜像装置的平面设备和方法
- 申请号:KR1020147033166 申请日:2013-05-29
- 公开(公告)号:KR1020150003883A 公开(公告)日:2015-01-09
- 发明人: 샤퍼디르크 , 클라우스빌프리드 , 청힌유앤쏘니
- 申请人: 칼 짜이스 에스엠테 게엠베하
- 申请人地址: Rudolf-Eber-Strasse *, ***** Oberkochen, Germany
- 专利权人: 칼 짜이스 에스엠테 게엠베하
- 当前专利权人: 칼 짜이스 에스엠테 게엠베하
- 当前专利权人地址: Rudolf-Eber-Strasse *, ***** Oberkochen, Germany
- 代理人: 양영준; 안국찬
- 优先权: DE10 2012 209 3095 2012-06-01; US61/654,179 2012-06-01
- 国际申请: PCT/EP2013/061096 2013-05-29
- 国际公布: WO2013178695 2013-12-05
- 主分类号: H01L21/027
- IPC分类号: H01L21/027 ; G03F7/20
According to the present invention, at least one mirror arrangement is disclosed a lithographic apparatus 100 having a (200), the mirror arrangement that the front side of the mirror substrate 202 and having a reflective surface (204), the mirror includes a side wall 206 and a mounting element (214) extending along the periphery of the mirror substrate 202 from the back side, the mirror arrangement 200 of the substrate 202. the lithographic apparatus 100 by a mounting element the structure is mounted on the element. The inner side of the rear side and the side wall 206 of the mirror substrate 202 and forms the boundary of the cavity 212. Each of the mounting element 214 is connected to the mirror arrangement 200 in the joint faces (216). Relation S / D> there is 0.5 is satisfied in at least one of the joint faces 216, where D is the mirror from the centroid of the connection represents the thickness of the surface 216, side wall 206 in, S is connected to the surface 216, the substrate It indicates the length of the shortest path through the material to the rear side of the mirror 202.
公开/授权文献:
- KR101748478B1 미러 배열체를 생산하기 위한 방법 및 리소그래피 장치 公开/授权日:2017-06-16
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |