基本信息:
- 专利标题: 메모리 전력 관리
- 专利标题(英):Memory power management
- 专利标题(中):存储电源管理
- 申请号:KR1020147034695 申请日:2008-08-28
- 公开(公告)号:KR1020150002900A 公开(公告)日:2015-01-07
- 发明人: 애들먼맥심 , 베넷존씨알
- 申请人: 바이올린 메모리 인코포레이티드
- 申请人地址: **** Great America Parkway, Santa Clara, CA *****, U.S.A.
- 专利权人: 바이올린 메모리 인코포레이티드
- 当前专利权人: 바이올린 메모리 인코포레이티드
- 当前专利权人地址: **** Great America Parkway, Santa Clara, CA *****, U.S.A.
- 代理人: 김용인
- 优先权: US12/079,364 2008-03-26; US12/199,386 2008-08-27; US60/967,101 2007-08-31
- 国际申请: PCT/US2008/074628 2008-08-28
- 国际公布: WO2009032751 2009-03-12
- 主分类号: G11C11/4074
- IPC分类号: G11C11/4074 ; G06F1/32 ; G06F12/02
With a plurality of memory modules coupled to the memory controller, the memory system is described. Power status of each memory module, and is controlled according to the function performed by the memory module. If any read or write operation is not performed on the specific memory modul, at least some of the circuit elements may be operated in a low-power mode. A memory circuit coupled to the memory module may be in a low power mode by the clock inert. The memory circuit has data integrity can be guaranteed, while by issuing the refresh command, the memory circuit can be guaranteed by the clock after the inert when in the low power mode, to activate the clock, and issuing the refresh command, the refresh operation is completed.
信息查询:
EspacenetIPC结构图谱:
G11C11/56 | 组优先于G11C11/02至G11C11/54中各组。 |
--G11C11/19 | .在谐振电路中应用非线性电抗器件的 |
----G11C11/26 | ..应用放电管的 |
------G11C11/40 | ...应用晶体管的 |
--------G11C11/401 | ....形成需要刷新或电荷再生的单元的,即,动态单元的 |
----------G11C11/4063 | .....辅助电路,例如,用于寻址、译码、驱动、写、读出或定时的 |
------------G11C11/407 | ......用于场效应型存储单元的 |
--------------G11C11/4074 | .......电源或电压发生电路,例如,偏置电压发生器、衬底片电压发生器、后备电源、电源控制电路 |