基本信息:
- 专利标题： 발광 다이오드
- 专利标题（英）：Light emitting diode device
- 专利标题（中）：发光二极管装置
- 申请号：KR1020130060292 申请日：2013-05-28
- 公开(公告)号：KR1020140140166A 公开(公告)日：2014-12-09
- 发明人： 이종람 , 김성준 , 송양희
- 申请人： 포항공과대학교 산학협력단 , 서울바이오시스 주식회사 , 주식회사 글로우원
- 申请人地址： 경상북도 포항시 남구 청암로 ** (지곡동)
- 专利权人： 포항공과대학교 산학협력단,서울바이오시스 주식회사,주식회사 글로우원
- 当前专利权人： 포항공과대학교 산학협력단,서울바이오시스 주식회사,주식회사 글로우원
- 当前专利权人地址： 경상북도 포항시 남구 청암로 ** (지곡동)
- 代理人： 특허법인에이아이피
- 主分类号： H01L33/36
- IPC分类号： H01L33/36 ; H01L33/42 ; H01L33/32
The present invention relates to a gallium nitride-based light emitting diode is applied to a transparent electrode including a metal layer and metal oxide layer. Light emitting diode according to the present invention includes a substrate, an n-type GaN layer disposed on the substrate-based semiconductor layer, the n-type gallium nitride-based p-type which is located on the semiconductor layer of gallium nitride-based semiconductor layer, the n-type gallium nitride-based semiconductor comprising: a transparent electrode which is located an active layer interposed between the layer and the p-type gallium nitride based semiconductor layer, on the p-type gallium nitride-based semiconductor layer, the transparent electrode includes a first metal layer and metal oxide layer is a multi-layer formed by sequentially formed of a structure, at the interface with the metal oxide layer and the external environment, the impedance of the metal oxide layer forms an impedance matching with the external environment.